| Investigation of surface
microstructure of nanostructured films |
To
achieve stable operating conditions, long equipment
life, high efficiency, and low pollution levels during
the operation of turbine combustion systems, the
in-situ measurement of the composition of natural
gas or syngas is required. The Davis group
has developed SiC metal-insulator-semiconductor field
effect transistors and AlGaN/GaN high-electron-moblilty
transistors as sensors of the components of natural
gas prior to combustion. The REU students involved
in this program will be trained to (1) operate state-of-the-art
chemical vapor deposition systems for the growth
of the SiC- and AlGaN/GaN-based films that compose
the material device structures and (2) use atomic
force and scanning electron microscopies to determine
the surface microstructures of the surfaces of the
substrates and the subsequently grown films that
compose the MISFET and HEMT devices. |
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